NSF award 2501623 · University of Massachusetts Lowell

ERI: LPCVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench Schottky Barrier Diodes

Final report due

28 January 2028

in 467 days · The award ends on 30 September 2027.

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Dates this award owes

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Decide about an extension2 Jun 2027in 227 days
award ending 2027-09-30 · Research.gov
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Extension request16 Aug 2027in 302 days
award ending 2027-09-30 · Research.gov
PAPPG 24-1: “at least 45 days prior to the end date”
No-cost extension notice20 Sep 2027in 337 days
award ending 2027-09-30 · Research.gov
PAPPG 24-1: “at least ten calendar days prior to the end date”
Final report due28 Jan 2028in 467 days
award ending 2027-09-30 · Research.gov
PAPPG 24-1: “no later than 120-days following the end date of the award”
Project outcomes report due28 Jan 2028in 467 days
award ending 2027-09-30 · Research.gov
PAPPG 24-1: “no later than 120 days following the end date”
Award is closed out28 Jan 2028in 467 days
award ending 2027-09-30 · Research.gov
PAPPG 24-1: “financially closed out 120 days after their expiration date”

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How we got this date

NSF lists this award's end date as 30 September 2027.
NSF rules say the final report is due no later than 120 days after that.
So the final report is due by 28 January 2028.

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Award card

Award number: 2501623
Period of support: 1 Oct 2025 – 30 Sep 2027
Amount: $200,000
Awardee: University of Massachusetts Lowell, Lowell, MA
Program: ERI-Eng. Research Initiation
Directorate: ENG

Abstract

Abstract Title: ERI: Low Pressure CVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench Schottky Barrier Diodes Abstract: As electricity demand continues to grow across diverse sectors including electric transportation, smart grids, renewable energy, aerospace, industrial automation, and data-intensive computing, the need for efficient, compact, and reliable power management has become…

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