NSF award 2511984 · Board of Regents, NSHE, obo University of Nevada, Reno

Collaborative Research: Low-noise high electron mobility transistors with outstanding noise performance via atomic layer etching

Final report due

28 January 2029

in 833 days · The award ends on 30 September 2028.

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award ending 2028-09-30 · Research.gov
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PAPPG 24-1: “at least 45 days prior to the end date”
No-cost extension notice20 Sep 2028in 703 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “at least ten calendar days prior to the end date”
Final report due28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “no later than 120-days following the end date of the award”
Project outcomes report due28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “no later than 120 days following the end date”
Award is closed out28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “financially closed out 120 days after their expiration date”

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NSF lists this award's end date as 30 September 2028.
NSF rules say the final report is due no later than 120 days after that.
So the final report is due by 28 January 2029.

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Award card

Award number: 2511984
Period of support: 1 Oct 2025 – 30 Sep 2028
Amount: $289,704
Awardee: Board of Regents, NSHE, obo University of Nevada, Reno, Reno, NV
Program: OFFICE OF MULTIDISCIPLINARY AC, ADVANCED TECHNOLOGIES & INSTRM
Directorate: MPS

Abstract

This program aims to create semiconductor amplifiers with outstanding noise performance in the microwave spectrum. Researchers from the California Institute of Technology (CalTech) and the University of Nevada-Reno (UNR) will accomplish this goal by leveraging a new nanofabrication method, atomic layer etching, which permits semiconductor device manufacturing with atomic-scale precision. If successful, these new…

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