NSF award 2537290 · Arizona State University

Modeling of III-Nitride Devices for Device-Circuit Co-optimization under Cryogenic Environments

Final report due

28 January 2030

in 1,198 days · The award ends on 30 September 2029.

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PAPPG 24-1: “at least 45 days prior to the end date”
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award ending 2029-09-30 · Research.gov
PAPPG 24-1: “at least ten calendar days prior to the end date”
Final report due28 Jan 2030in 1198 days
award ending 2029-09-30 · Research.gov
PAPPG 24-1: “no later than 120-days following the end date of the award”
Project outcomes report due28 Jan 2030in 1198 days
award ending 2029-09-30 · Research.gov
PAPPG 24-1: “no later than 120 days following the end date”
Award is closed out28 Jan 2030in 1198 days
award ending 2029-09-30 · Research.gov
PAPPG 24-1: “financially closed out 120 days after their expiration date”

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NSF lists this award's end date as 30 September 2029.
NSF rules say the final report is due no later than 120 days after that.
So the final report is due by 28 January 2030.

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Award card

Award number: 2537290
Period of support: 15 Oct 2026 – 30 Sep 2029
Amount: $596,140
Awardee: Arizona State University, Scottsdale, AZ
Program: EPMQD: Electronic, Photonic, M
Directorate: ENG

Abstract

Modeling of III-Nitride Devices for Device-Circuit Co-optimization under Cryogenic Environments Abstract: Electronic systems used in quantum computing, space missions, superconducting equipment, and high-performance computing must operate reliably at temperatures far below those encountered by ordinary electronics. Electronic devices made from gallium nitride are well suited for high-power and high-frequency…

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