NSF award 2512397 · University of California-Riverside

Development of magnesium zinc oxide deep ultraviolet semiconductor lasers

Final report due

28 January 2029

in 833 days · The award ends on 30 September 2028.

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Decide about an extension2 Jun 2028in 593 days
award ending 2028-09-30 · Research.gov
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Extension request16 Aug 2028in 668 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “at least 45 days prior to the end date”
No-cost extension notice20 Sep 2028in 703 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “at least ten calendar days prior to the end date”
Final report due28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “no later than 120-days following the end date of the award”
Project outcomes report due28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “no later than 120 days following the end date”
Award is closed out28 Jan 2029in 833 days
award ending 2028-09-30 · Research.gov
PAPPG 24-1: “financially closed out 120 days after their expiration date”

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NSF lists this award's end date as 30 September 2028.
NSF rules say the final report is due no later than 120 days after that.
So the final report is due by 28 January 2029.

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Award card

Award number: 2512397
Period of support: 1 Oct 2025 – 30 Sep 2028
Amount: $375,000
Awardee: University of California-Riverside, Riverside, CA
Program: EPMQD: Electronic, Photonic, M
Directorate: ENG

Abstract

A diode laser device is made from semiconductor, a material with its electrical conductivity dictated by the quantities of negatively and positively charged mobile particles within itself, which are referred as electrons and holes, respectively. An n-type semiconductor possesses more electrons than holes while a p-type semiconductor has more holes than electrons. Traditional diode laser devices contain a key…

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